2SB955 transistor equivalent, silicon pnp power transistor.
*Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
.
*High DC Current Gain-
: hFE = 1000(Min)@ IC= -5A
*Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -120V(Min)
*Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -5A
*Complement to Type 2SD1126
*Minimum Lot-t.
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